Wide-bandgap SiC 650V Schottky Barrier Diodes Improve Efficiency in High-Power Systems
2024-08-15
Product News
This family of 650V silicon carbide Schottky barrier diode is suitable for high-efficiency AC-DC, DC-DC and DC-AC conversion applications. Unlike silicon-based fast-recovery rectifiers, these SiC devices have negligible switching losses due to low capacitive charge (QC). This makes them suitable for high-speed switching applications, benefitting circuit designs with increased power density and can reduce overall solution size.
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Product Portfolio
| Part Number | Package | VRRM (V) | IF (A) | VF @ TA= 25°C | IR @TA= 25°C Typ. (μA) | IR @TA= 175°C Typ. (μA) | IFSM (A) | QC Typ (nC) | |
| Typ. (V) | Max. (V) | ||||||||
| TSCDF06065G1 | ITO-220AC-2L | 650 | 6 | 1.32 | 1.45 | 0.37 | 5.32 | 44 | 20.8 |
| TSCDF08065G1 | 8 | 1.35 | 0.61 | 5.5 | 72 | 27.12 | |||
| TSCDF10065G1 | 10 | 1.34 | 0.8 | 5.42 | 84 | 31.7 | |||
| TSCDF12065G1 | 12 | 1.36 | 0.75 | 10.1 | 88 | 37.16 | |||
| TSCDF16065G1 | 16 | 1.38 | 0.87 | 9.6 | 100 | 49.03 | |||
| TSCDF20065G1 | 20 | 1.38 | 1.37 | 11.3 | 128 | 65.57 | |||
| TSCDT06065G1 | TO-220AC-2L | 6 | 1.32 | 0.37 | 5.32 | 44 | 20.8 | ||
| TSCDT08065G1 | 8 | 1.35 | 0.61 | 5.5 | 72 | 27.12 | |||
| TSCDT10065G1 | 10 | 1.34 | 0.8 | 5.42 | 84 | 31.7 | |||
| TSCDT12065G1 | 12 | 1.36 | 0.75 | 10.1 | 88 | 37.16 | |||
| TSCDT16065G1 | 16 | 1.38 | 0.87 | 9.6 | 100 | 49.03 | |||
| TSCDT20065G1 | 20 | 1.38 | 1.37 | 11.3 | 128 | 65.57 | |||
| TSCDH16065G1 | TO-247-3L | 16 | 1.33 | 0.61 | 9.08 | 68 | 29.18 | ||
| TSCDH20065G1 | 20 | 1.34 | 0.63 | 5.5 | 88 | 35.39 | |||
| TSCDH30065G1 | 30 | 1.36 | 0.96 | 9.61 | 128 | 54.36 | |||
| TSCDH40065G1 | 40 | 1.33 | 0.8 | 18.78 | 140 | 64.85 | |||
| Title | File |
| Newsletter_7_2024_SiC-Schottky-650V.pdf |  |
